Type II GaAs/AlAs superlattices under high excitation

Type II GaAs/AlAs superlattices under high excitation

High intensity photoluminescence data on GaAs/AlAs superlattices and multi quantum wells of type I1 at low temperature are reported. The variation with density of the renormalized band gap reveals the competition between the Hartree energy and the many-body effects (mainly exchange). Preliminary analysis for a lot of samples with widely different periods provides a satisfactory fit with Hartree...

Luminescence dynamics in type-II GaAs/AlAs superlattices near the type-I to type-II crossover.

Photoluminescence studies of type-II CdSe/CdTe superlattices

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Long-Period InAs/GaSb Type-II Superlattices for Terahertz Application

We present a theoretical study on the terahertz (THz) optoelectronic properties of long-period InAs/GaSb type-II super lattices (SLs). The eight-band k·p model is used to calculate the electronic structures of such SLs and on the basis of band structures, the Boltzmann equation approach is employed to calculate the optical absorption coefficients for the corresponding SL systems. It is found th...

Terahertz band-gap in InAs/GaSb type-II superlattices

We demonstrate theoretically that it is possible to realize terahertz (THz) fundamental band-gap between the electron mini-band in the InAs layer and the heavy-hole mini-band in the GaSb layer in InAs/GaSb based type II superlattices (SLs). The THz band-gap can be tuned by varying the sample growth parameters such as the well widths of the InAs and/or GaSb layers. The presence of such band-gap ...